MURTA50020

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 200 V to 400 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive MURTA50020 thru MURTA50040R VRRM = 200 V - 400 V IF(AV) = 500 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA50020(R) MURTA50040(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 200 141 200 -55 to 150 -55 to 150 400 283 400 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA50020(R) MURTA50040(R) Average forward current (per pkg) IF(AV) TC = 100 °C Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC ...