GB50SLT12-247
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced...
GB50SLT12-247
1200 V SiC MPS™ Diode
Silicon Carbide
Schottky Diode
Features
High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit QC/IF Low Thermal Resistance 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient of VF Extremely Fast Switching Speeds
Package
VRRM IF (Tc = 135°C) QC
= 1200 V = 103 A = 199 nC
2
1 TO-247-2L
Advantages
Low Standby Power Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling without Thermal Runaway Smaller Heat Sink Requirements Low Reverse Recovery Current Low Device Capacitance Low Reverse Leakage Current
Applications
Boost Diode in Power Factor Correction (PFC) Switched Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Motor Drives Freewheeling / Anti-parallel Diode in Inverters Solar Inverters & Wind Energy Conv...
