Silicon Power Schottky Diode
Features • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • ...
Silicon Power
Schottky Diode
Features High Surge Capability Types from 20 V to 40 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive
MBRT60020 thru MBRT60040R
VRRM = 20 V - 40 V IF(AV) = 600 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM VRMS VDC
Tj Tstg
20 14 20 -55 to 150 -55 to 150
30 21 30 -55 to 150 -55 to 150
35 25 35 -55 to 150 -55 to 150
40 28 40 -55 to 150 -55 to 150
V V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage ...
