PBSS4240X

PBSS4240X 40 V, 2 A NPN low VCEsat (BISS) transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation 1.3 Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat ICRM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance repetitive peak collector current IC = 1 A; IB...