PBSS4041NX
60 V, 6.2 A NPN low VCEsat (BISS) transistor
11 December 2012
Product data sheet
1. Technical summary
NPN...
PBSS4041NX
60 V, 6.2 A
NPN low VCEsat (BISS)
transistor
11 December 2012
Product data sheet
1. Technical summary
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PX.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
3. Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
...
