PBSS305NZ

PBSS305NZ 80 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PZ. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage motor control „ High-voltage power switches (e.g. motors, fans) „ Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current - - 5.1 A ICM RC...