VS-20CTQ035-M3 Rectifier Datasheet

VS-20CTQ035-M3 Datasheet, PDF, Equivalent


Part Number

VS-20CTQ035-M3

Description

High Performance Schottky Rectifier

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download VS-20CTQ035-M3 Datasheet


VS-20CTQ035-M3
VS-20CTQ035-M3, VS-20CTQ040-M3, VS-20CTQ045-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
Base
common
cathode
2
3L TO-220AB
2
Anode Common Anode
1 cathode 3
PRIMARY CHARACTERISTICS
IF(AV)
VR
2 x 10 A
35 V, 40 V, 45 V
VF at IF
0.57 V
IRM max.
15 mA at 125 °C
TJ max.
EAS
175 °C
13 mJ
Package
3L TO-220AB
Circuit configuration
Common cathode
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-20CTQ... center tap Schottky rectifier series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
Range
tp = 5 μs sine
VF 10 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
20
35 to 45
1060
0.57
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-20CTQ035-M3
35
VS-20CTQ040-M3
40
VS-20CTQ045-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
see fig. 5
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 145 °C, rectangular waveform
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 2.0 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
1060
265
13
2.0
UNITS
A
mJ
A
Revision: 17-Aug-17
1 Document Number: 96273
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-20CTQ035-M3
VS-20CTQ035-M3, VS-20CTQ040-M3, VS-20CTQ045-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
10 A
20 A
TJ = 25 °C
10 A
20 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.64
0.76
0.57
0.68
2
15
900
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
DC operation
See fig. 4
DC operation
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style 3L TO-220AB
VALUES
-55 to +175
UNITS
°C
3.25
1.63 °C/W
0.50
2g
0.07 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20CTQ035
20CTQ040
20CTQ045
Revision: 17-Aug-17
2 Document Number: 96273
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features VS-20CTQ035-M3, VS-20CTQ040-M3, VS-20CTQ 045-M3 www.vishay.com Vishay Semicond uctors High Performance Schottky Recti fier, 2 x 10 A Base common cathode 2 3L TO-220AB 2 Anode Common Anode 1 cat hode 3 PRIMARY CHARACTERISTICS IF(AV) VR 2 x 10 A 35 V, 40 V, 45 V VF at I F 0.57 V IRM max. 15 mA at 125 °C TJ max. EAS 175 °C 13 mJ Package 3L TO-220AB Circuit configuration Commo n cathode FEATURES • 175 °C TJ oper ation • Low forward voltage drop • High frequency operation • High purit y, high temperature epoxy encapsulation for enhanced mechanical strength and m oisture resistance • Guard ring for e nhanced ruggedness and long term reliab ility • Designed and qualified accord ing to JEDEC®-JESD 47 • Material cat egorization: for definitions of complia nce please see www.vishay.com/doc?99912 DESCRIPTION The VS-20CTQ... center tap Schottky rectifier series has been opt imized for low reverse leakage at high temperature. The proprietary barrier technology allows for reli.
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