910nm High Power TOP LED
Data Sheet
EDC910D-1100-S5 rev. B
910nm High Power TOP LED
Outline and Internal Circuit
(Unit : mm)
Features
• Chip Ma...
Description
Data Sheet
EDC910D-1100-S5 rev. B
910nm High Power TOP LED
Outline and Internal Circuit
(Unit : mm)
Features
Chip Material : AlGaAs Chip Dimension : 1000um * 1000um Number of Chips : 1pce Peak Wavelength : 910nm typ. Lead Frame Die : Ceramics Lens : Silicone Resin
Application
Absolute Maximum Ratings (Tc=25°C)
Item
Symbol
Ratings
Power Dissipation
PD 2500
Forward Current
IF 1000
Pulse Forward Current
IFP 3000
Reverse Voltage
VR 5
Thermal Resistance
Rthja
10
Junction Temperature
Tj 120
Operating Temperature
Topr
-40 ~ +100
Storage Temperature
Tstg -40 ~ +100
Soldering Temperature
TSOL
250
‡Pulse Forward Current condition : Duty 1% and Pulse Width=10us. ‡Soldering condition : Soldering condition must be completed with 5 seconds at 250°C.
Optical and Electrical Characteristics (Tc=25°C)
Parameter
Symbol
Min
Typ
Max
Unit
Forward Voltage
VF VFP
1.8 2.5 2.8
V
Total Radiated Power
PO
850 2300
mW
Radiant Intensity
IE
...
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