PBSS2540MB
40 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 1 — 4 April 2012
Product data sheet
1. Product profile
...
PBSS2540MB
40 V, 0.5 A
NPN low VCEsat (BISS)
transistor
Rev. 1 — 4 April 2012
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3540MB.
1.2 Features and benefits
Leadless ultra small SMD plastic package
Low package height of 0.37 mm Low collector-emitter saturation
voltage VCEsat High collector current capability IC and
ICM
1.3 Applications
DC-to-DC conversion Supply line switching Battery charger
High efficiency due to less heat generation
AEC-Q101 qualified Reduced Printed-Circuit Board (PCB)
requirements
LCD backlighting Drivers in low supply voltage
applications (e.g. lamps and LEDs)
1.4 Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
...
