PBSS4160QA
60 V, 1 A NPN low VCEsat (BISS) transistor
23 August 2013
Product data sheet
1. General description
NPN low...
PBSS4160QA
60 V, 1 A
NPN low VCEsat (BISS)
transistor
23 August 2013
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5160QA.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified
3. Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current...