IXFK420N10T

Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T IXFX420N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 420A 2.6mΩ 140ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 100 100 V V ± 20 V ± 30 V 420 160 1000 A A A 100 A 5J 1670 W 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 1.13/10 20..120 /4.5..27 °C °C Nm/lb.in. N/lb. 10 g 6g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS =...