Document
Standard Rectifier Module
Phase leg
Part number
MDD56-08N1B
2
1
3
MDD56-08N1B
VRRM I FAV VF
= 2x 800 V = 71 A = 1.14 V
Backside: isolated
Features / Advantages:
● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current
Applications:
● Diode for main rectification ● For single and three phase
bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
Package: TO-240AA
● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
Rectifier
Symbol VRSM VRRM IR
VF
I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 800 V
VR = 800 V
forward voltage drop
IF = 100 A
IF = 200 A
IF = 100 A
IF = 200 A
average forward current
TC = 100°C
RMS forward current
180° sine
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ
junction capacitance
VR = 400 V; f = 1 MHz
MDD56-08N1B
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C
Ratings
min. typ. max. Unit 900 V
800 V
200 µA
10 mA
1.21 V
1.48 V
1.14 V
1.45 V
71 A
150 A
0.80 V
3 mΩ
0.51 K/W
0.2
K/W
245 W
1.40 kA
1.51 kA
1.19 kA
1.29 kA
9.80 kA²s
9.49 kA²s
7.08 kA²s
6.87 kA²s
27
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
MDD56-08N1B
Package TO-240AA
Ratings
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
min. typ. max. Unit 200 A
-40
150 °C
-40
125 °C
-40
125 °C
76
g
MD M
T
d Spp/App d Spb/Apb V
ISOL
mounting torque
2.5
terminal torque
2.5
creepage distance on surface | striking distance through air
terminal to terminal terminal to backside
13.0 9.7 16.0 16.0
isolation voltage
t = 1 second t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
4800 4000
4 Nm 4 Nm
mm mm
V V
UL Logo
Date Code + Location
yywwZ
XXXXXXXX
123456
Part Number Lot#
Circuit
2D Barcode
Ordering Standard
Ordering Number MDD56-08N1B
Marking on Product MDD56-08N1B
Delivery Mode Box
Quantity Code No.
36
458015
Similar Part MDD56-12N1B MDD56-14N1B MDD56-16N1B MDD56-18N1B
Package TO-240AA TO-240AA TO-240AA TO-240AA
Voltage class 1200 1400 1600 1800
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max
threshold voltage
0.8
R0 max
slope resistance *
1.8
* on die level
T VJ = 150°C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
Outlines TO-240AA
MDD56-08N1B
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
MDD56-08N1B
Rectifier
2000
1500
50 Hz, 80% VRRM
IFSM
1000
[A]
500
TVJ = 45°C TVJ = 150°C
104 VR = 0 V
TVJ = 45°C
I2t [A2s]
TVJ = 125°C
200
150
IFAVM
100
[A]
50
DC 180° sin 120°
60° 30°
0 10-3
10-2
10-1
100
101
t [s]
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
103 1
2
3
t [ms]
6 8 10
Fig. 2 I2t versus time (1-10 ms)
200
150
PT
100
[W]
50
DC 180° sin 120°
60° 30°
RthJA
[K/W] 0.8 1 1.2 1.5 2 2.5 3 4
0
0
20
40
80
0
50
100
150
200
ITAVM, IFAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
800
600
Ptot
400
[W]
200
R
L.