1N4148T

1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation p Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV PV Tj Tstg Value 100 75 2 500 300 150 440 500 200 –65...+200 Unit V V A mA mA mA mW mW °C °C tp=1ms VR=0 l=4mm, TL=45°C l=4mm, TL 25°C x Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (4) 1N4148.1N4448 Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=5mA IF=10mA IF=100mA VR=20 V VR=20 V, Tj=150 °C VR=75 V IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV VHF=2V, f=100MHz IF=IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1xIR, RL=100W Type 1N4448 1N4148 1N4448 Symbol VF VF VF IR IR IR V(BR) CD Min 0.62 Typ Max 0.72 1 1 25 50 5 Unit V V V nA mA mA V pF % ns ns Reverse current Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery y time 100 4 45 8 4 hr trr trr Typical Characteristics (Tj = 25_C unless otherwise specified) 1.2 VF – Forward Voltage ( V ) IF = 100 mA IF – Forward Current ( mA ) 1.0 0.8 10 mA 0.6 0.4 0.1 mA 0.2 0...