LAB
MECHANICAL DATA Dimensions in mm (inches)
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005)
SEME
1N4149CSM
SILICON EPITAXIAL PLANAR DIODE
General Purpose and Switching Diode in Hermetic Ceramic Surface Mount Package for High Reliability Applications
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.76 ± 0.15 (0.03 ± 0.006)
0.31 rad. (0.012)
A 1.40 (0.055) max.
1.02 ± 0.10 (0.04 ± 0.004)
SOT23 CERAMIC (LCC1 PACKAGE)
Underside View
PAD 1 — Anode PAD 2 — Not Connected PAD 3 — Cathode
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Parameter
VR VRRM IF(AV) IF IFRM IFSM Ptot Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current Power Dissipation at Tamb = 25 °C t = 1µs t = 1s
Test Conditions
Min.
Typ.
Max.
100 100 150 200 450 2000 500 500
Unit
V V mA mA mA mA mW
CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VF IR V(BR)R Cd Vfr trr Forward Voltage Reverse Current Reverse Avalanche Breakdown Voltage Capacitance Forward Recovery Voltage Reverse Recovery Time
Test Conditions
IF = 10mA VR = 20V VR = 20V , Tj = 150°C IR = 100µA IR = 5µA VR = 0V , f = 1 MHz IF = 50mA , tr = 20ns IF = 10mA to IR = 60mA RL = 100Ω
Min.
Typ.
Max.
1 25 50
Unit
V nA µA V V
100 100 4 2.5 4
pF V ns
10/99
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