Switching diode. 1N4150 Datasheet


1N4150 diode. Datasheet pdf. Equivalent


Part Number

1N4150

Description

Switching diode

Manufacture

Rohm

Total Page 2 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
Diodes
Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
1N4148 / 1N4150 / 1N4448 / 1N914B
This product is available only outside of Japan.
!Applications
High-speed switching
!External dimensions (Units : mm)
!Features
1) Glass sealed envelope. (GSD)
2) High speed.
3) High reliability.
!Construction
Silicon epitaxial planar
C
29±1
CATHODE BAND (BLACK)
Type No.
φ 0.5±0.1
3.8±0.2
29±1
A
φ 1.8±0.2
ROHM : GSD
EIAJ :
JEDEC : DO-35
!Absolute maximum ratings (Ta = 25°C)
Type
VRM
VR
IFM
IO
IF
IFSM
1µs
P
Tj
(V) (V) (mA) (mA) (mA) (A) (mW) (°C)
Topr
(°C)
Tstg
(°C)
1N4148
100 75 450 150 200 2 500 200 65~+200 65~+200
1N4150
50 50 600 200 250 4 500 200 65~+200 65~+200
1N4448
(1N914B)
100 75 450 150 200
2
500 200 65~+200 65~+200
!Electrical characteristics (Ta = 25°C)
Type
@@@
0.1mA 0.25mA 1mA
@
2mA
VF (V)
BV (V) Min.
@@@@@@@@@@
5mA 10mA 20mA 30mA 50mA 100mA 200mA 250mA 5µA 100µA
IR (µA) Max.
Cr (pF)
@25°C
@150°C VR=0
VR (V)
VR (V) f=1MHz
trr (ns)
VR=6V
IF=10mA
RL=100
1N4148
1N4150
1N4448
(IN914B)
0.54
0.62
1.0
0.66
0.62
0.74
0.72
0.76 0.82 0.87
0.86 0.92 1.0
1.0
0.025 20
75 100
50.0 20
5.0 75
50 0.1 50 100.0 50
0.025 20
100
50.0 20
5.0 75
4
2.5
4
4
4
4
The upper figure is the minimum VF and the lower figure is the maximum VF value.

1N4150
Diodes
1N4148 / 1N4150 / 1N4448 / 1N914B
!Electrical characteristic curves (Ta = 25°C)
100
50 100°C
3000
20 1000
70°C
10
300
5 50°C
100
2
30 Ta=25°C
1
0.5 10
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)
3
0 20 40 60 80 100 120
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
3.0
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
3
VR=6V
Irr=1/10IR
2
1
0
0 10 20 30
FORWARD CURRENT : IF (mA)
Fig. 4 Reverse recovery time
characteristics
100
PULSE
50 Single pulse
20
10
5
2
1
0.1 1
10 100 1000 10000
PULSE WIDTH : Tw (ms)
Fig. 5 Surge current characteristics
0.01µF
D.U.T.
PULSE GENERATOR
OUTPUT 50
5
50
SAMPLING
OSCILLOSCOPE
INPUT
100ns
OUTPUT
trr
0
Fig. 6 Reverse recovery time (trr) measurement circuit


Features 1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4 448 / 1N914B ∗This product is availab le only outside of Japan. !Application s High-speed switching !External dimen sions (Units : mm) !Features 1) Glass sealed envelope. (GSD) 2) High speed. 3 ) High reliability. CATHODE BAND (BLAC K) Type No. φ 0.5±0.1 C 29±1 3.8±0 .2 29±1 A φ 1.8±0.2 !Construction Silicon epitaxial planar ROHM : GSD EI AJ : − JEDEC : DO-35 !Absolute maxim um ratings (Ta = 25°C) Type 1N4148 1N4 150 1N4448 (1N914B) VRM (V) 100 50 100 VR (V) 75 50 75 IFM (mA) 450 600 450 IO (mA) 150 200 150 IF (mA) 200 250 200 I FSM 1µs (A) 2 4 2 P (mW) 500 500 500 T j (°C) 200 200 200 Topr (°C) −65~+2 00 −65~+200 −65~+200 Tstg (°C) − 65~+200 −65~+200 −65~+200 !Electri cal characteristics (Ta = 25°C) VF (V) Type @ @ @ 1mA BV (V) Min. @ 30mA IR (µA) Max. @25°C VR (V) 0.025 5.0 0.1 0.025 5.0 20 75 50 20 75 50.0 @ 2mA @ 5mA @ 10mA @ 20mA @ 50mA @ @ @ 0.1mA 0.25mA 100mA 200mA 250mA @ 5µA 75 @ 100µA 100.
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