1N4150 PLANAR DIODES Datasheet

1N4150 Datasheet, PDF, Equivalent


Part Number

1N4150

Description

SILICON EPITAXIAL PLANAR DIODES

Manufacture

GOOD-ARK Electronics

Total Page 1 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
D IM
A
B
C
D
D IM E N S IO N S
in c h e s
mm
M in .
M ax.
M in .
M ax.
- 0 .11 4 -
2 .9
- 0 .0 7 5 -
1 .9
- 0 .0 1 7 -
0 .4 2
0 .6 3 0
-
1 6 .0
-
N o te
D IM
A
B
C
D
D IM E N S IO N S
in c h e s
mm
M in .
M ax.
M in .
M ax.
- 0 .1 5 4 -
3 .9
- 0 .0 7 5 -
1 .9
- 0 .0 2 0 -
0 .5 2
1 .0 8 3 - 2 7 .5 0 -
Electrical Characteristics
Type
Peak
reverse
voltage
Max.
aver.
rectified
current
Max.
power
dissip.
at 25
Max. Max. forward
junction voltage drop
temper-
ature
Max. reverse
current
Max. reverse recovery time
1N914
1N4149 1)
1N4150
1N4152
1N4153
1N4154
1N4447 1)
1N4449 1)
1N4450
1N4451
1N4453
VRM V
100
100
50
40
75
35
100
100
40
40
30
IO mA
75
150
200
150
150
150 2)
150
150
150
150
150
Ptot mW
500
500
500
400
400
500
500
500
400
400
400
Tj
200
200
200
175
175
200
200
200
175
175
175
VF V
1.0
at
IF mA
10
In nA
25
at
VR V
20
1.0 10 25 20
1.0 200 100 50
0.55 0.10 50
30
0.55 0.10 50
50
1.0 0.10 100 25
1.0 20 25 20
1.0 30 25 20
0.54 0.50 50
30
0.50 0.10 50
30
0.55 0.01 50
20
trr nS Conditions
Max. 4.0
Max. 4.0
Max. 4.0
Max. 2.0
Max. 2.0
Max. 2.0
Max. 4.0
Max. 4.0
Max. 4.0
Max. 10
-
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=IR=10 to 200 mA, to 0.1 IF
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
I =10mA, V =6V, R =100 , to I =1mA
F RL
R
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=IR=10mA, to IR=1mA
I =I =10mA, to I =1mA
FR
R
-
1N4454
75
150 400 175 1.0 10 100 50 Max. 4.0
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
Ptot=300mW
TJ=175
TS=-65 to +175
Rtha 0.4K/mW
1
IF=IR=10mA, to IR=1mA
N o te


Features 1N914 THRU 1N4454 SILICON EPITAXIAL PLAN AR DIODES Features Silicon Epitaxial P lanar Diodes for general purpose and sw itching The types 1N4149, 1N4447 and 1N 4449 are also available in glass case D O-34. D IM E N S IO N S D IM A B C D I M E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 . 5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1 N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. p ower dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 Ma x. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175 Ma x. forward voltage drop Max. reverse c urrent Max. reverse recovery time VF V 1.0 1.0 1.0 0.55 0.55 1.0 1.0 1.0 0.5 4 0.50 0.55 1.0 at IF mA 10 10 200 0.1 0 0.10 0.10 20 30 0.50 0.10 0.01 10 In nA 25 25 100 50 50 100 .
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