1N4150 SWITCHING DIODES Datasheet

1N4150 Datasheet, PDF, Equivalent


Part Number

1N4150

Description

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

Manufacture

Dc Components

Total Page 2 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
DC COMPONENTS CO., LTD.
R RECTIFIER SPECIALISTS
1N914
THRU
1N 1N
4148 4454
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES
VOLTAGE RANGE -50 to 100 Volts
CURRENT - 0.075 to 0.2 Ampere
FEATURES
* Silicon epitaxial planar diodes
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High speed switching
* High current capability
* High reliability
MECHANICAL DATA
* Case: Glass sealed case
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.13 gram
DO-34 / DO-35
25.0MIN
0.52Ø
L
2.0MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
25.0MIN
DO-34 DO-35
L: 2.9
MAX
4.2
MAX
Dimensions in millimeters
SYMBOL 1N914 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454
Maximum Recurrent Peak Reverse Voltage
VRRM
100 100
50
75
35 100 75
Maximum Average Rectified Current
Maximum Power Dissipation Tamb=25oC
Io 75 150 200 150 150 150 150
Ptot 250 500 500 500 500 500 500
Maximum Forward Voltage
VF 1.0/10 1.0/10 1.0/200 1.0/50 1.0/30 1.0/100 1.0/10
Maximum Reverse Current
IR 5000/75 5000/75 100/50 50/50 100/25 5000/75 100/10
Maximum Reverse Recovery Time
trr 4.0 4.0 4.0 2.0 2.0 4.0 4.0
Typical Junction Capacitance
CJ 4.0
Operating and Storage Temperature Range
TJ,TSTG
-65 to + 200
NOTE: 1-1N914A, 1N914B IS SAME AS 1N914, EXCEPT DIFFERENT IN FORWARD VOLTAGE:
1N914A-1.0/20 V/mA
1N914B-1.0/100 V/mA
2.Suffix "M" stands for "DO-34" package.(e.g.:1N4148M)
UNITS
V
mA
mW
V/mA
nA/V
nS
pF
oC
98
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Features DC COMPONENTS CO., LTD. R 1N914 THRU 1N 4148 1N 4454 RECTIFIER SPECIALISTS T ECHNICAL SPECIFICATIONS OF HIGH SPEED S WITCHING DIODES VOLTAGE RANGE -50 to 10 0 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial pl anar diodes Low power loss, high effici ency Low leakage Low forward voltage Hi gh speed switching DO-34 / DO-35 * Hi gh current capability * High reliabilit y MECHANICAL DATA * * * * * Case: Glas s sealed case Lead: MIL-STD-202E, Metho d 208 guaranteed Polarity: Color band d enotes cathode end Mounting position: A ny Weight: 0.13 gram 0.52Ø 25.0MIN L 2.0MAX 25.0MIN DO-34 DO-35 MAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS Ra tings at 25 o C ambient temperature unl ess otherwise specified. Single phase, half wave, 60 Hz, resistive or inductiv e load. For capacitive load, derate cur rent by 20%. L: 2.9 MAX 4.2 MAX Dime nsions in millimeters SYMBOL Maximum R ecurrent Peak Reverse Voltage Maximum A verage Rectified Current Maximum Power Dissipation Tamb=25oC Max.
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