DONGGUAN ZHONGGUI ELECTRONICS CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI3401 P-Channel Enhancement Mode Field Effec...
DONGGUAN ZHONGGUI ELECTRONICS CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI3401 P-Channel Enhancement Mode Field Effect
Transistor
SOT-23
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1
D
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature
Symbol VDS VGS ID PD RθJA TJ TSTG
G S
Value -30 ±12 -4.2 350 357 150 -55~+150
Unit V V A
mW ℃/W
℃ ℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-24V,VGS = 0V
Gate-source leakage current
IGSS VGS =±12V, VDS = 0V
On characteristics
Drain-source on-...