NV6115

NV6115 1. Features GaNFast™ Power IC  Monolithically-integrated gate drive  Wide logic input range range with hysteresis  5 V / 15 V input-compatible  Wide VCC range (10 to 30 V)  Programmable turn-on dV/dt  200 V/ns dV/dt immunity  800 V Transient Voltage Rating  650 V Continuous Voltage Rating  Low 170 mΩ resistance  Zero reverse recovery charge  ESD protection – 2 kV (HBM), 1 kV (CDM)  2 MHz operation Small, low-profile SMT QFN  6 x 8 mm footprint, 0.85 mm profile  Minimized package inductance Sustainability RoHS, Pb-free, REACH-compliant Up to 40% energy savings vs Si solutions System level 4kg CO2 Carbon Footprint reduction Product Reliability 20-year limited product warranty (see Section 14 for details) 2. Topologies / Applications AC-DC, DC-DC, DC-AC QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Telecom 4. Typical Application Circuits GaNFast™ Power IC QFN 5 x 6 mm Simplified schematic 3. Description This GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters in the world. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5 x 6 mm SMT Q...