Silicon Epitaxial Planar Diodes
BAV23 / SE / CC / CA
Silicon Epitaxial Planar Diodes
High voltage switching diode
BAV23 3
BAV23SE 3
BAV23CC 3
BAV23C...
Description
BAV23 / SE / CC / CA
Silicon Epitaxial Planar Diodes
High voltage switching diode
BAV23 3
BAV23SE 3
BAV23CC 3
BAV23CA 3
12
12
12
12
BAV23 Marking Code: HC BAV23SE Marking Code: PY BAV23CC Marking Code: PZ BAV23CA Marking Code: RA
TO-236 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Repetitive Reverse Voltage
Reverse Voltage
Forward Current
Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current
Power Dissipation
at t = 10 ms at t = 100 μs at t = 1 μs
Thermal Resistance Junction to Ambient Air Operating Junction and Storage Temperature Range
Symbol VRRM VR IF(AV) IFRM
IFSM
Ptot RθJA Tj, Tstg
Value
250
200
400
625 1.7 3 9 350 357 - 65 to + 150
Unit V V mA mA
A
mW OC/W
OC
Characteristics at Ta = 25 O
Parameter
Reverse Breakdown Voltage at IR = 100 µA
Forward Voltage at IF = 100 mA at IF = 200 mA
Reverse Current at VR = 200 V, Tj = 25 OC at VR = 200 V, Tj = 150 OC
Total Capacitance at VR = 0 V, f = 1 MHz
Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω
Symbol V(BR)R
VF
IR Ctot trr
Min. 250
-
-
-
Max. -
1 1.25
100 100
5
50
Unit V
V
nA µA pF ns
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
BAV23 / SE / CC / CA
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
...
Similar Datasheet