SWITCHING DIODE
• 1N4153UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLU...
Description
1N4153UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 SWITCHING DIODE HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
1N4153UR-1 CDLL4153
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 150 mA @ TA = +25°C Derating: 1.0 mA dc/°C Above TA = +25°C Forward Surge Current: 2A (pk), (tp = 1µs); 0.25A (pk), (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
Type V BR IR = 5 µA V dc 4153UR-1 CDLL4153 75 75 V (pk) 50 50 V RWM I R1 VR = 50 V dc TA = 25°C nA dc 50 50 1 R2 VR = 50 V dc TA = 150°C µA dc 50 50 C VR = 0; f = 1 Mhz; trr
DIM D F G G1 S
MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN.
FIGURE 1
pF 2.0 2.0 ns 4 4
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80; LL34)
FORWARD VOLTAGE LIMITS – ALL TYPES
V F1 Limits I F = 100 µA dc V F2 I F = 250 µA dc V F3 I F = 1 mA dc V F4 I F = 2 mA dc V F5 I F = 10 mA dc V F6
LEAD FINISH: Tin / Lead
I F = 20 mA dc
V dc minimum maximum 0.49 0.55
V dc 0.53 0.59
V dc 0.59 0.67
V dc 0.62 0.70
V dc 0.70 0.81
V dc 0.74 0.88
THERMAL RESISTANCE (ROJEC): 100 °C/W maximum at L = 0 THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface Sy...
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