1N4154

1N4154 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. Features: DISCRETE POWER AND SIGNAL TECHNOLOGIES 500 milliwatt Power Dissipation package. Fast Switching Speed, Typical capacitance less than 1.0 picofarad. Ordering: 13 inch reel, 50 mm (T50R) & 26 mm (T26R) Tape; 10,000 units per reel. High Conductance Fast Diode Absolute Maximum Ratings* Sym Tstg TJ PD R OJA Wiv IO IF if iF(surge) TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature Total Power Dissipation at TA = 25OC Linear Derating Factor from TA = 25OC Thermal Resistance Junction-to-Ambient Working Inverse Voltage Average Rectified Current DC Forward Current (IF) Recurrent Peak Forward Current (IF) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Value -65 to +200 175 500 3.33 300 35 100 300 400 1.0 4.0 CATHODE BAND MARKING LOGO 1N 41 54 Units OC OC mW mW/OC OC/W V mA mA mA Amp Amp *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 0.500 Minimum 12.70 Typ 1.000 0.200 (5.08) 0.120 (3.05) 0.022 (0.558) Diameter 0.018 (0.458) Typ 20 mils 0.090 (2.28) Diameter 0.060 (1.53) Electrical Characteristics SYM BV IR VF CT TRR TA = 25OC unless otherwise noted CHARACTERISTICS Breakdown Voltage Revers...