PJM7002NSA

PJM7002NSA N-Enhancement Field Effect Transistor Features  High density cell design for low RDS(ON)  Voltage controlled small signal switching  High saturation current capability  High speed switching SOT-23 Application  PWM applications  Load switch  Power management Schematic diagram Drain 3 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Storage Temperature 1 Gate 2 Source Symbol VDS VGS ID IDM PD TJ TSTG Value 60 ± 20 115 800 200 150 - 55 to + 150 Unit V V mA mA mW OC OC www.pingjingsemi.com Revison：1.0 Nov-2017 1/4 PJM7002NSA N-Enhancement Field Effect Transistor Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Drain-to-Source Breakdown Voltage V(BR)DS VGS...