PJM7002NSA N-Enhancement Field Effect Transistor
Features
High density cell design for low RDS(ON) Voltage controll...
PJM7002NSA N-Enhancement Field Effect
Transistor
Features
High density cell design for low RDS(ON) Voltage controlled small signal switching High saturation current capability High speed switching
SOT-23
Application
PWM applications Load switch Power management
Schematic diagram
Drain 3
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Storage Temperature
1 Gate
2 Source
Symbol VDS VGS ID IDM PD TJ TSTG
Value 60 ± 20 115 800 200 150
- 55 to + 150
Unit V V mA mA
mW OC OC
www.pingjingsemi.com Revison:1.0 Nov-2017
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PJM7002NSA N-Enhancement Field Effect
Transistor
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain-to-Source Breakdown Voltage V(BR)DS
VGS...