PJM60H07NTF

Features  DC−fast switching  ESD improved capability  Low on resistance  Low gate charge  Low reverse transfer capacitances  100% single pulse avalanche energy test  VDSS=600V ID=7A PD=40W RDSON(TYP)=0.9Ω Applications  Power switch circuit of adaptor and charger PJM60H07NTF Single N−Channel Power MOSFET TO-220F 2 Drain 1 Gate 3 Source Absolute Maximum Ratings (TC=25℃unless otherwise stated) Symbol Parameter Rating VDSS ID Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC=100°C 600 7 4.5 IDMa1 Pulsed Drain Current 28 VGS Gate-to-Source Voltage EASa2 Single Pulse Avalanche Energy EAra1 Avalanche Energy ,Repetitive IARa1 dv/dta3 Avalanche Current Peak Diode Recovery dv/dt Power Dissipation PD Derating Factor above 25°C VESD(GS) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) TJ,Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering a1：Repetitive rating; pulse width limited by...