PJM03N10SQ

Descriptions  Fast Switching  Low RDS(ON) and Gate Charge  Low Reverse Transfer Capacitance  Halogen and Antimony Free (HAF) Product is acquired Features  VDS = 100V, ID = 3A  RDS(ON) ＜ 140 mΩ (@VGS=10V)  MSL: 1 Level Applications  Load Switch  PWM Applications Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation 1 Junction and Storage Temperature Range Maximum Junction-to-Ambient Symbol VDSS VGSS ID IDM PD TJ, TSTG RθJA PJM03N10SQ N-Channel MOSFET SOT-89 Mark: 0103M Schematic Diagram Drain Gate Source Value 100 ±20 3 20 0.5 150, -55 to 150 250 Units V V A A W °C °C/W www.pingjingsemi.com Revision：1.0 Jun-2018 1/6 Electrical Characteristics (TA = 25℃) Parameter Symbol Static Parameters Conditions Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body Lea...