SE3082G

SE3082G N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.0mΩ @ VGS=10V Pin configurations See Diagram below D1 D1 D2 S1D2 87 65 D1 D1 D2 D2 1 2 34 G1 S2 S2 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Thermal Resistance Symbol RθJC RθJA Parameter Junction to Case Junction to Ambient G1 S1 G2 S2 Symbol VDS VGS ID PD TJ Rating 30 ±20 80 170 3.1 -55 to 150 Units V V A W ℃ Typ Max Units - 1 ℃/W - 40 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE3082G Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Paramete...