SE3080K

SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 80 170 83 0.56 285 -55 to 175 Units V V A W W/℃ mJ ℃ Typ Max Units - 1.8 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE...