SE6880A

SE6880A N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 70V  RDS(ON) = 6.3mΩ @ VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single Pulse Avalanche Energy Total Power Dissipation @TC=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case(t≤10s) Rating 70 ±20 80 310 450 150 -55 to 175 Units V V A mJ W ℃ Typ Max Units - 1 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE6880A Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Par...