1N4532

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES Hermetically sealed leaded glass SOD68 (DO-34) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 75 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching Protection diodes in reed relays. DESCRIPTION 1N4531; 1N4532 The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. k handbook, halfpage a MAM156 The diodes are type branded. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − −65 − 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2 CONDITIONS MIN. − − − − MAX. 75 75 200 450 V V mA mA UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = ...