Document
PBSS302PZ
20 V, 5.5 A PNP low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302NZ.
1.2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current
RCEsat collector-emitter saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Condition.