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PBSS302PZ Dataheets PDF



Part Number PBSS302PZ
Manufacturers nexperia
Logo nexperia
Description PNP Transistor
Datasheet PBSS302PZ DatasheetPBSS302PZ Datasheet (PDF)

PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat.

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PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ DC-to-DC conversion „ MOSFET gate driving „ Motor control „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Condition.


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