RJK60S7DPK-M0

Preliminary Datasheet RJK60S7DPK-M0 600V - 30A - SJ MOS FET High Speed Power Switching R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZH-A (Package name:TO-3PSG) 4 D 1 23 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. STch = 25C, Tch  150C 3. Value at Tc = 25C Symbol VDSS VGSS ID Note1 ID Note1 ID Note1 (pulse) IDR Note1 ...