DatasheetsPDF.com

HYG400P10LR1V

P-Channel Enhancement Mode MOSFET

Description

HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Portable equipment and battery powered systems ...

HUAYI

Download HYG400P10LR1V Datasheet

Similar Datasheet

HYG400P10LR1D P-Channel Enhancement Mode MOSFET - HUAYI
HYG400P10LR1U P-Channel Enhancement Mode MOSFET - HUAYI
HYG400P10LR1V P-Channel Enhancement Mode MOSFET - HUAYI

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)