1N5817S-1N5819S
Schottky Barrier Rectifiers
Features
Metal-Semiconductor junction with guard ring Epitaxial constructio...
1N5817S-1N5819S
Schottky Barrier Rectifiers
Features
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC A--405,molded plastic Terminals: Axial lead ,solderable per
MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.008 ounces,0.23 grams Mounting position: Any
VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A A - 405
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N5817S
1N5818S
1N5819S
UNITS
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage
VRRM VRMS VDC
Maximum average forw ard rectified...