YJD15N10A Datasheet: N-Channel Enhancement Mode Field Effect Transistor





YJD15N10A N-Channel Enhancement Mode Field Effect Transistor Datasheet

Part Number YJD15N10A
Description N-Channel Enhancement Mode Field Effect Transistor
Manufacture Yangzhou Yangjie
Total Page 6 Pages
PDF Download Download YJD15N10A Datasheet PDF

Features: YJD15N10A RoHS COMPLIANT N-Channel Enh ancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS( ON)( at VGS=10V) ● RDS(ON)( at VGS=4. 5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A <110 mohm <120 mo hm General Description ● Trench Powe r MV MOSFET technology ● Excellent pa ckage for heat dissipation ● High den sity cell design for low RDS(ON) Appli cations ● DC-DC Converters ● Power management functions ■ Absolute Maxi mum Ratings (TA=25℃unless otherwise n oted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Volta ge Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Single Pulse Aval anche Energy Total Power Dissipation TC=25℃ TC=100℃ Thermal Resistance Junction-to-Case B Junction and Storag e Temperature Range ■ Ordering Infor mation (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM EAS PD R θJC TJ ,TSTG 100 ±20 15 10.5 60 9 45 22.5 3.3 -55~+175 V V A A mJ W W ℃/ W ℃ MINIMUM PACKAG.

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YJD15N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% UIS Tested
● 100% VDS Tested
100V
15A
110 mohm
120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TC=25
TC=100
Single Pulse Avalanche Energy
Total Power Dissipation
TC=25
TC=100
Thermal Resistance Junction-to-Case B
Junction and Storage Temperature Range
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
VDS
VGS
ID
IDM
EAS
PD
RθJC
TJ ,TSTG
100
±20
15
10.5
60
9
45
22.5
3.3
-55+175
V
V
A
A
mJ
W
W
/ W
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJD15N10A
F1
YJD15N10A
2500
2500
25000
13“ reel
S-B1130
Rev.2.0,20-Dec-18
1/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

                 






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