Effect Transistor. YJL03N06A Datasheet

YJL03N06A Datasheet PDF, Equivalent


Part Number

YJL03N06A

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Yangzhou Yangjie

Total Page 6 Pages
PDF Download
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YJL03N06A Datasheet
YJL03N06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
60V
3A
100 mohm
120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current
Pulsed Drain Current A
TA=25
TA=70
Total Power Dissipation @ TC=25
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
VDS
VGS
ID
IDM
PD
RθJA
TJ ,TSTG
60
±20
3
2.4
12
1.2
105
-55+150
V
V
A
A
W
/ W
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJL03N06A
F2
S10.
3000
30000
120000
7“ reel
S-S1967
Rev.2.1,25-Dec-18
1/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

YJL03N06A Datasheet
YJL03N06A
Electrical Characteristics (TJ=25unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
60
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
IGSS1
IGSS2
VDS=60V,VGS=0V
VGS= ±20V, VDS=0V
VGS= ±10V, VDS=0V
1
±100
±50
μA
nA
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1 1.3 2
V
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=3A
VGS= 4.5V, ID=2A
81 100
88 120
Diode Forward Voltage
VSD IS=3A,VGS=0V
0.8 1.2
V
Maximum Body-Diode Continuous Current
IS
3A
Dynamic Parameters
Input Capacitance
Ciss
325
Output Capacitance
Coss VDS=30V,VGS=0V,f=1MHZ
90 pF
Reverse Transfer Capacitance
Crss
17
Switching Parameters
Total Gate Charge
Qg
5.1
Gate-Source Charge
Qgs VGS=10V,VDS=30V,ID=3A
1.3 nC
Gate-Drain Charge
Qgd
1.7
Turn-on Delay Time
tD(on)
13
Turn-on Rise Time
Turn-off Delay Time
tr
tD(off)
VGS=10V,VDD=30V, ID=1.5A,RL=1Ω
RGEN=3Ω
51
19
ns
Turn-off fall Time
tf
A. Pulse Test: Pulse Width300us,Duty cycle 2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
12
S-S1967
Rev.2.1,25-Dec-18
2/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com


Features Datasheet pdf YJL03N06A RoHS COMPLIANT N-Channel Enh ancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS( ON)( at VGS=10V) ● RDS(ON)( at VGS=4. 5V) 60V 3A <100 mohm <120 mohm Ge neral Description ● Trench Power MV M OSFET technology ● Excellent package for heat dissipation ● High density c ell design for low RDS(ON) Application s ● DC-DC Converters ● Power manage ment functions ■ Absolute Maximum Ra tings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain- source Voltage Gate-source Voltage Dra in Current Pulsed Drain Current A TA=2 5℃ TA=70℃ Total Power Dissipation @ TC=25℃ Thermal Resistance Junction -to-Ambient B Junction and Storage Tem perature Range ■ Ordering Informatio n (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM PD RθJA TJ , TSTG 60 ±20 3 2.4 12 1.2 105 -55~+1 50 V V A A W ℃/ W ℃ MINIMUM PACKA GE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL03N06A F2 S10. 3000.
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