Effect Transistor. YJL2301C Datasheet

YJL2301C Datasheet PDF, Equivalent


Part Number

YJL2301C

Description

P-Channel Enhancement Mode Field Effect Transistor

Manufacture

Yangzhou Yangjie

Total Page 5 Pages
PDF Download
Download YJL2301C Datasheet PDF


YJL2301C Datasheet
YJL2301C
RoHS
  COMPLIANT
 
P-Channel Enhancement Mode Field Effect Transistor
Feature
●VDS=-20V,ID=-3.4A
RDS(ON)<64mΩ@VGS=-4.5V
RDS(ON)<89mΩ@VGS=-2.5V
●Epoxy meets UL 94 V-0 flammability rating
●Moisture Sensitivity Level1
●High density cell design for low RDS(ON)
●High Speed switching
●Rugged and reliable
●SOT-23 Package
Application
●Battery protection
●Load switch
●Power management
Maximum Ratings (TA=25unless otherwise noted)
Symbol
Parameter
VDS Drain-source Voltage
VGS Gate-source Voltage
ID Drain Current
PD Total Power Dissipation
RthJA Thermal Resistance From Junction To Ambient
TJ Operation Junction Temperature
TSTG
Storage Temperature
Value
-20
±10
-3.4
1
125
-55+150
-55+150
Unit
V
V
A
W
/W
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
YJL2301C
F2
MINIMUM
PACKAGE(pcs)
3000
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
30000
120000
7” reel
S-D006
Rev. 1.0, 30-Jan-18
1/5
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

YJL2301C Datasheet
YJL2301C
 
Electrical Characteristics (TA=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR)DSS
IDSS
IGSS
VGS= 0V, ID=-250μA
VDS=-20V,VGS=0V
VGS= ±10V, VDS=0V
Gate threshold voltage*
VGS(th)
VDS= VGS, ID=-250μA
Drain-source on-resistance*
RDS(ON)
VGS= -4.5V, ID=-3.4A
VGS= -2.5V, ID=-3.0A
Forward Transconductance
Dynamic Characteristics **
gFS VDS= -5V, ID=-3.4A
Input Capacitance
Ciss
Output Capacitance
Coss VDS=-10V,VGS=0V,f=1MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics**
Turn-on delay time
Turn-on rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=-10V,VGS=-4.5V,RL=2.8Ω,ID=-
1A,RGEN=6Ω
Turn-off Fall time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS=-10V,ID=-3.4A,VGS=-4.5V
Gate-Drain Charge
Source-Drain Diode characteristics
Qgd
Drain-Source Diode Forward Current
IS
Diode Forward voltage
VSD
Notes:
*Pulse Test: Pulse Width300μA, Duty Cycle2%.
**These parameters have no way to verify.
VGS=0V,IS=-3.4A
Min
-20
-0.4
5
 
Typ
-0.7
49
59
478
81
52
12
54
15
9
4.3
0.8
1.1
-0.8
Max Unit
-1
±100
-1.0
64
89
V
μA
nA
V
s
pF
ns
nC
-3.4 A
-1.2 V
S-D006
Rev. 1.0, 30-Jan-18
2/5
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com


Features Datasheet pdf YJL2301C RoHS   COMPLIANT   P-Channe l Enhancement Mode Field Effect Transis tor Feature ●VDS=-20V,ID=-3.4A RDS(O N)<64mΩ@VGS=-4.5V RDS(ON)<89mΩ@VGS=-2 .5V ●Epoxy meets UL 94 V-0 flammabil ity rating ●Moisture Sensitivity Leve l1 ●High density cell design for low RDS(ON) ●High Speed switching ●Rugg ed and reliable ●SOT-23 Package Appl ication ●Battery protection ●Load s witch ●Power management ■ Maximum Ratings (TA=25℃ unless otherwise note d) Symbol Parameter VDS Drain-source Voltage VGS Gate-source Voltage ID D rain Current PD Total Power Dissipatio n RthJA Thermal Resistance From Juncti on To Ambient TJ Operation Junction Te mperature TSTG Storage Temperature V alue -20 ±10 -3.4 1 125 -55~+150 -55 ~+150 Unit V V A W ℃/W ℃ ℃ Ordering Information (Example) PREFE RED P/N PACKING CODE Marking YJL2301 C F2 MINIMUM PACKAGE(pcs) 3000 INNER BOX QUANTITY(pcs) OUTER CARTON QUANTI TY(pcs) DELIVERY MODE 30000 120000 7” reel S-D006 Rev. 1.
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