YJL2301C
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Feature
●VDS=-20V,ID=-3.4A RDS(ON)<64m...
YJL2301C
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect
Transistor
Feature
●VDS=-20V,ID=-3.4A RDS(ON)<64mΩ@VGS=-4.5V RDS(ON)<89mΩ@VGS=-2.5V
●Epoxy meets UL 94 V-0 flammability rating ●Moisture Sensitivity Level1 ●High density cell design for low RDS(ON) ●High Speed switching ●Rugged and reliable ●SOT-23 Package
Application
●Battery protection ●Load switch ●Power management
■ Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
Parameter
VDS Drain-source Voltage
VGS Gate-source Voltage
ID Drain Current
PD Total Power Dissipation
RthJA Thermal Resistance From Junction To Ambient
TJ Operation Junction Temperature
TSTG
Storage Temperature
Value
-20 ±10 -3.4
1 125 -55~+150 -55~+150
Unit
V V A W
℃/W ℃ ℃
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
YJL2301C
F2
MINIMUM PACKAGE(pcs)
3000
INNER BOX QUANTITY(pcs)
OUTER CARTON QUANTITY(pcs)
DELIVERY MODE
30000
120000
7” reel
S-D006 Rev. 1...