RN1101MFV

RN1101MFV to RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN2101MFV to RN2106MFV Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN1101MFV RN1102MFV RN1103MFV RN1104MFV RN1105MFV RN1106MFV 4.7 10 22 47 2.2 4.7 Absolute Maximum Ratings (Ta = 25°C) 4.7 10 22 47 47 47 VESM JEDEC 1.BASE 2.EMITTER 3.COLLECTOR ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector...