CEN250D1

CEN250B1 CEN250D1 CEN250M1 4.0 AMP SCR 200 THRU 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN250B1, CEN250D1, and CEN250M1 are epoxy molded silicon controlled rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=75°C unless otherwise noted) SYMBOL CEN250B1 CEN250D1 CEN250M1 Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 RMS On-State Current IT(RMS) 4.0 Peak One Cycle Surge (t=8.3ms) ITSM 20 Peak Gate Power PGM 500 Average Gate Power Dissipation PG(AV) 100 Peak Gate Current IGM 200 Operating Junction Temperature TJ -40 to +125 Storage Temperature Tstg -40 to +150 Thermal Resistance ΘJA 80 Thermal Resistance ΘJC 7.5 UNITS V A A mW mW mA °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IGT VD=12V, RL=10Ω IH IT=50mA, RGK=...