QPD1003

QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram Key Features Frequency: 1.2 to 1.4 GHz Output Power (P3dB)1: 540 W Linear Gain1: 19.9 dB Typical PAE3dB1: 66.7% Operating Voltage: 50 V Low thermal resistance package Pulse capable Note 1: @ 1.3 GHz Applications Military radar Civilian radar Input Matching Network Output Matching Network Part No. QPD1003 QPD1003PCB401 Description 1.2 – 1.4 GHz RF IMFET 1.2 – 1.4 GHz EVB Datasheet Rev. E, June 14, 2019 | Subject to change without notice - 1 of 18 - www.qorvo.com QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current, IDMAX Gate Current Range, IG Power Dissipation, 10% DC 1 mS PW, PDISS RF Input Power, 10% DC 1 mS PW, 1.3 GHz, T = 25 °C Mounting Temperature (30 Seconds) Storage Temperature +145 -7 to +2 20 See page 4. 410 +42 320  −65 to +150 V V A mA W dBm °C °C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommen...