QPD1013

QPD1013 150W, 65V, DC – 2.7 GHz, GaN RF Transistor General Description The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram 6 Pin DFN (7.2 x 6.6 x 0.9 mm) Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 %1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull) Applications  Military radar  Land mobile and military radio communications  Test instrumentation  Wideban...