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FC5516010R Dataheets PDF



Part Number FC5516010R
Manufacturers Panasonic
Logo Panasonic
Description Dual N-channel MOSFET
Datasheet FC5516010R DatasheetFC5516010R Datasheet (PDF)

FC5516010R Dual N-channel MOSFET For switching FC5516010R Unit: mm  Features  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: V5  Basic Part Number Dual FK350601 (Source Common type)  Packaging FC5516010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source Voltage FET1 Gate-source Voltage FET2 Drain current Drain current (Pulsed) .

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FC5516010R Dual N-channel MOSFET For switching FC5516010R Unit: mm  Features  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: V5  Basic Part Number Dual FK350601 (Source Common type)  Packaging FC5516010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source Voltage FET1 Gate-source Voltage FET2 Drain current Drain current (Pulsed) Total power dissipation Overall Channel temperature Storage temperature Symbol VDS VGS ID IDp PD Tch Tstg Rating 60 ±12 100 200 150 150 -55 to +150 Unit V V mA mA mW °C °C 1. Gate(FET1) 2. Source(FET1,2) 3. Gate(FET2) 4. Drain(FET2) 5. Drain(FET1) Panasonic JEITA Code SMini5-F3-B SC-113CB SOT-353 Internal Connection 54 FET1 FET2 12 3 Pin name 1. Gate(FET1) 2. Source(FET1,2) 3. Gate(FET2) 4. Drain(FET2) 5. Drain(FET1) Publication date: October 2012 Ver. BED 1 F.


DS1347 FC5516010R PBSS3515M


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