PBSS4021PT
20 V, 3.5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 29 January 2010
Product data sheet
1. Product profil...
PBSS4021PT
20 V, 3.5 A
PNP low VCEsat (BISS)
transistor
Rev. 01 — 29 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4021NT.
1.2 Features
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation resis...