PBSS4160PANS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
11 February 2015
Product data sheet
1. General descripti...
PBSS4160PANS
60 V, 1 A
NPN/
NPN low VCEsat (BISS)
transistor
11 February 2015
Product data sheet
1. General description
NPN/
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/
PNP complement: PBSS4160PANPS.
PNP/
PNP complement: PBSS5160PAPS.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified
3. Applications
Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)...