PBSS4260PANPS

PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor 4 February 2016 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS 2. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. mo...