Document
PBLS4001D
40 V PNP BISS loadswitch
Rev. 03 — 5 January 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package I Low threshold voltage (<1 V) compared to MOSFET I Low drive power required I Space-saving solution I Reduction of component count
1.3 Applications
I Supply line switches I Battery charger switches I High-side switches for LEDs, drivers and backlights I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current
RCEsat
collector-emitter saturation IC = −500 mA;
resistance
IB = −50 mA
TR2; NPN resistor-equipped transistor
VCEO IO R1
collector-emitter volt.