PBHV8515QA
150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor
19 November 2015
Product data sheet
1. Genera...
PBHV8515QA
150 V, 500 mA
NPN high-voltage low VCEsat (BISS)
transistor
19 November 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBHV9515QA.
2. Features and benefits
High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint
3. Applications
LED driver for LED chain module High Intensity Discharge (HID) front lighting Automotive motor management Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCEO
IC hFE
Quick reference data Parameter collector-emitter voltage
collector current
DC current ga...