SOT89
PBHV8540X
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
5 December 2013
Product data sheet
1. Ge...
SOT89
PBHV8540X
500 V, 0.5 A
NPN high-voltage low VCEsat (BISS)
transistor
5 December 2013
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040X.
2. Features and benefits
High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC AEC-Q101 qualified
3. Applications
LED driver for LED chain module LCD backlighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCESM
VCEO
IC hFE
Quick reference data Parameter
Conditions
collector-emitter peak VBE = 0 V voltage
collector-emitter voltage
open base
collector current
DC current gain
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit -...