PBHV9414Z
140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor
24 January 2014
Product data sheet
1. General des...
PBHV9414Z
140 V, 4 A
PNP high-voltage low VCEsat (BISS)
transistor
24 January 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough Small Signal (BISS)
transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC AEC-Q101 qualified
3. Applications
LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter saturation resistance
IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit - - -140 V
- - ...
