PBHV9040Z
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 02 — 15 January 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8540Z.
1.2 Features
I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified
1.3 Applications
I Electronic ballast for fluorescent lighting I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch mode power supply
1.4 Quick reference data
Table 1. Symbol VCESM
VCEO IC hFE
Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain
Conditions VBE = 0.