PBHV9540Z
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8140Z.
1.2 Features
High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package
1.3 Applications
LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Symbol VCESM
VCEO IC hFE
Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions VBE = 0 V
open base
VCE = −10 V; IC .